2002. 7. 2
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SEMICONDUCTOR
TECHNICAL DATA
KRC116M~KRC122M
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
1
2
3
TO-92M
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. COMMON (EMITTER)
2. OUT (COLLECTOR)
3. IN (BASE)
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
MAXIMUM RATING (Ta=25
)
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
R1
R2
COMMON
OUT
IN
TYPE NO.
R1(k
)
R2(k
)
KRC116M
1
10
KRC117M
2.2
2.2
KRC118M
2.2
10
KRC119M
4.7
10
KRC120M
10
4.7
KRC121M
47
10
KRC122M
100
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC116M
122M
V
O
50
V
Input Voltage
KRC116M
V
I
10, -5
V
KRC117M
12, -10
KRC118M
12, -5
KRC119M
20, -7
KRC120M
30, -10
KRC121M
40, -15
KRC122M
40, -10
Output Current
KRC116M
122M
I
O
100
mA
Power Dissipation
P
D
400
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
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